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| MMBFJ270 -- P-Channel Switch August 2008 MMBFJ270 P-Channel Switch Features * This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. * Sourced from process 88. S D G SOT-23 Mark : 61S Absolute Maximum Ratings (Note1) Symbol VDG VGS IGF TJ, TSTG Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Ta = 25C unless otherwise noted Parameter Value -30 30 50 -55 ~ 150 Units V V mA C Operating and Storage Junction Temperature Range Note1 : These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol PD RJA Parameter Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient (Note2) Value 225 1.8 556 Units mW mW/C C/W Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch Electrical Characteristics Symbol Off Characteristics V(BR)GSS IGSS VGS(off) TC = 25C unless otherwise noted Parameter (Note3) Test Condition MIN MAX Units Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage (Note3) IG = 1.0A, VDS = 0 VGS = 20V, VDS = 0 VDS = -15V, ID = -1.0nA 30 200 0.5 2.0 V pA V On Characteristics IDSS gfs goss Zero-Gate Voltage Drain Current * Forward Transferconductance VDS = -15V, VGS = 0 VGS = 0V, VDS = 15V, f = 1.0kHz -2.0 6000 -15 15000 200 mA mhos mhos Common- Source Output Conduc- VGS = 0V, VDS = 15V, f = 1.0kHz tance Note3 : Short duration test pulse used to minimize self-heating effect. (c) 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B 1 www.fairchildsemi.com MMBFJ270 -- P-Channel Switch Typical Characteristics Common Drain-Source -20 - DRAIN CURRENT (mA) T A = 25C TYP V GS(off) = 4.5 V Parameter Interactions - TRANSCONDUCTANCE (mmhos) 100 50 r DS I DSS g fs r DS 1,000 500 - DRAIN "ON" RESISTANCE () -16 V GS = 0 V 0.5 V -12 -8 1.0 V 1.5 V 2.0 V 10 5 I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ -100 mV, VGS = 0 V GS(off) @ V DS = - 15V, I D = - 1.0 A 100 50 I D -4 0 2.5 V 3.0 V 3.5 V fs g 1 0 -1 -2 -3 -4 VDS - DRAIN-SOURCE VOLTAGE (V) -5 1 V GS (OFF) 10 2 5 10 - GATE CUTOFF VOLTAGE (V) Transfer Characteristics -32 I D - DRAIN CURRENT (mA) - DRAIN CURRENT (mA) V DS = - 15 V V GS(off) = - 4.5 V Transfer Characteristics 16 V DS = - 15 V VGS(off) = - 4.5 V - 55C 25C 125C VGS(off) = 2.5 V - 55C 25C 125C -24 - 55C 25C 125C 12 -16 VGS(off) = 2.5 V - 55C 25C 125C 8 -8 4 0 I 0 1 2 3 VGS - GATE-SOURCE VOLTAGE (V) 4 0 0 D 1 2 3 VGS - GATE-SOURCE VOLTAGE (V) 4 - NORMALIZED RESISTANCE ( ) 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V) V GS(off) @ 5.0V, 10 A g os - OUTPUT CONDUCTANCE ( mhos) Normalized Drain Resistance vs Bias Voltage Output Conductance vs Drain Current f = 1.0 kHz -5.0V -5.0V 1000 r DS r DS = V GS 1 -________ V GS(off) 100 V GS(off) = - 4.5V -10V -20V -20V -10V 10 V GS(off) = - 2.5V DS _ 1 0.01 r _ _ 0.1 1 I D - DRAIN CURRENT (mA) _ 10 (c) 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B 2 www.fairchildsemi.com MMBFJ270 -- P-Channel Switch Typical Characteristics (Continued) Transconductance vs Drain Current C is (C rs ) - CAPACITANCE (pF) Capacitance vs Voltage 100 f = 0.1 - 1.0 MHz g fs - TRANSCONDUCTANCE (mmhos) 10 V GS(off) = 2.5V 5 25C V GS(off) = 6.0V 1 0.5 V DG = -15V f = 1.0 kHz - 55C 25C 125C 10 5 C is (V DS = -15V) C rs (V DS = -15V) 0.1 _ 0.1 ID _ 1 10 - DRAIN CURRENT (mA) _ _ 100 1 0 4 8 12 16 V GS - GATE-SOURCE VOLTAGE (V) 20 Noise Voltage vs Frequency r DS - DRAIN "ON" RESISTANCE () 100 e n - NOISE VOLTAGE (nV / Hz) 50 I D = - 0.2 mA Channel Resistance vs Temperature 1000 500 V GS(off) = 2.5V V GS(off) = 4.5V V GS(off) = 8.0V V DS = -100 mV V GS = 0 10 5 I D = 5.0 mA 100 50 V DG = - 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2f @ f 1.0 kHz 1 0.01 0.1 1 10 f - FREQUENCY (kHz) 100 10 -50 0 50 100 150 T A - AMBIENT TEMPERATURE ( o C) Power Derating 300 250 PC[W], POWER DISSIPATION 200 150 100 50 0 0 25 50 o 75 100 125 150 175 Tc[ C], CASE TEMPERATURE (c) 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B 3 www.fairchildsemi.com MMBFJ270 -- P-Channel Switch Package Dimensions SOT-23 0.20 MIN 2.40 0.10 0.40 0.03 1.30 0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 0.03 0.96~1.14 2.90 0.10 0.12 -0.023 +0.05 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF 0.97REF Dimensions in Millimeters (c) 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B 4 www.fairchildsemi.com MMBFJ270 MMBFJ270 P-Channel Switch (c) 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B www.fairchildsemi.com 5 |
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